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| Philips Semiconductors Product specification Thyristors BT145 series GENERAL DESCRIPTION Glass passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. QUICK REFERENCE DATA SYMBOL VDRM, VRRM IT(AV) IT(RMS) ITSM PARAMETER BT145Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500R 500 16 25 300 600R 600 16 25 300 800R 800 16 25 300 V A A A PINNING - TO220AB PIN 1 2 3 tab DESCRIPTION cathode anode gate anode PIN CONFIGURATION tab SYMBOL a k 1 23 g LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. half sine wave; Tmb 101 C all conduction angles half sine wave; Tj = 25 C prior to surge t = 10 ms t = 8.3 ms t = 10 ms ITM = 50 A; IG = 0.2 A; dIG/dt = 0.2 A/s -40 MAX. -500R -600R -800R 5001 6001 800 16 25 300 330 450 200 5 5 5 20 0.5 150 125 UNIT V A A A A A2s A/s A V V W W C C VDRM, VRRM Repetitive peak off-state voltages IT(AV) IT(RMS) ITSM Average on-state current RMS on-state current Non-repetitive peak on-state current I2t dIT/dt IGM VGM VRGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak reverse gate voltage Peak gate power Average gate power over any 20 ms period Storage temperature Operating junction temperature 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/s. October 1997 1 Rev 1.200 Philips Semiconductors Product specification Thyristors BT145 series THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. TYP. 60 MAX. 1.0 UNIT K/W K/W Thermal resistance junction to mounting base Thermal resistance in free air junction to ambient STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL IGT IL IH VT VGT ID, IR PARAMETER Gate trigger current Latching current Holding current On-state voltage Gate trigger voltage Off-state leakage current CONDITIONS VD = 12 V; IT = 0.1 A VD = 12 V; IGT = 0.1 A VD = 12 V; IGT = 0.1 A IT = 30 A VD = 12 V; IT = 0.1 A VD = VDRM(max); IT = 0.1 A; Tj = 125 C VD = VDRM(max); VR = VRRM(max); Tj = 125 C MIN. 0.25 TYP. 5 25 20 1.1 0.6 0.4 0.2 MAX. 35 80 60 1.5 1.0 1.0 UNIT mA mA mA V V V mA DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt tgt tq PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time Circuit commutated turn-off time CONDITIONS VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit ITM = 40 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s VD = 67% VDRM(max); Tj = 125 C; ITM = 50 A; VR = 25 V; dITM/dt = 30 A/s; dVD/dt = 50 V/s MIN. 200 TYP. 500 2 70 MAX. UNIT V/s s s October 1997 2 Rev 1.200 Philips Semiconductors Product specification Thyristors BT145 series 25 Ptot / W conduction form angle factor degrees a 30 4 60 2.8 90 2.2 120 1.9 180 1.57 BT145 1.9 2.2 2.8 4 Tmb(max) / C 100 a = 1.57 105 350 300 250 ITSM / A BT145 IT ITSM 20 time T Tj initial = 25 C max 15 110 200 150 100 10 115 5 120 50 0 0 5 10 IF(AV) / A 15 125 20 0 1 10 100 Number of half cycles at 50Hz 1000 Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. 10000 ITSM / A BT145 50 IT(RMS) / A BT145 40 30 1000 IT T dI T /dt limit ITSM time 20 10 Tj initial = 25 C max 100 10us 100us T/s 1ms 10ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 10ms. BT145 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 101C. VGT(Tj) VGT(25 C) 30 25 20 15 10 5 IT(RMS) / A 1.6 101 C BT151 1.4 1.2 1 0.8 0.6 0 50 Tmb / C 100 150 0 -50 0.4 -50 0 50 Tj / C 100 150 Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. October 1997 3 Rev 1.200 Philips Semiconductors Product specification Thyristors BT145 series 3 2.5 2 1.5 IGT(Tj) IGT(25 C) BT145 50 IT / A Tj = 125 C Tj = 25 C BT145 40 Vo = 1.045 V Rs = 0.011 ohms 30 typ max 20 1 10 0.5 0 -50 0 0 0.5 1 VT / V 1.5 2 0 50 Tj / C 100 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and maximum on-state characteristic. 3 2.5 2 1.5 1 BT145 10 Zth j-mb (K/W) BT145 1 0.1 P D tp 0.01 0.5 0 -50 0.001 10us 0.1ms 1ms 10ms tp / s 0.1s 1s t 0 50 Tj / C 100 150 10s Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. IH(Tj) IH(25 C) Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. dVD/dt (V/us) 3 2.5 2 1.5 1 0.5 BT145 10000 1000 gate open circuit 100 0 -50 0 50 Tj / C 100 150 10 0 50 Tj / C 100 150 Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. October 1997 4 Rev 1.200 Philips Semiconductors Product specification Thyristors BT145 series MECHANICAL DATA Dimensions in mm Net Mass: 2 g 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 15,8 max 3,0 max not tinned 3,0 13,5 min 1,3 max 1 2 3 (2x) 2,54 2,54 0,9 max (3x) 0,6 2,4 Fig.13. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". October 1997 5 Rev 1.200 Philips Semiconductors Product specification Thyristors BT145 series DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. October 1997 6 Rev 1.200 |
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